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Resonant-Tunnelling Diode
Expert Article 1. Prof. Hogg, CTO, explains how epitaxial regrowth enhances semiconductor laser performance
High Electron Mobility Transistors
GaAs/AlGaAs Lasers (7xx–8xx nm)
MBE Capabilities
High Electron Mobility Transistors
Services
AlInGaAsSb Quantum Cascade Lasers
MBE Capabilities
Lattice Matched 50 nm gate length GaAs Metamorphic HEMTs (In0.53GaAs channel)
MBE Capabilities
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