Professor Richard Hogg, Chief Technical Officer at III-V Epi, explains how design engineers might use epitaxial regrowth to enhance semiconductor laser performance and unlock new markets. First, Richard looks at…
AlGaAs based lasers 68x nm to 8xxnm Fabry-Perot and DFB lasers via re-growth MOCVD and MBE grown AlGaAs lasers spanning 680-710nm and ~805-835nm were realised to allow the development of…
~100% Reflectivity, & Excellent Uniformity MOCVD grown DBRs, developing our VECSEL technologies, were assessed in terms of wafer uniformity. Excellent radial uniformity was observed, with expected high reflectivities and low…
InP photonic crystal surface emitting laser (PCSEL) Very high aspect ratio features Significant experience and research in MOCVD epitaxial re-growth has allowed very high aspect ratio structures to be successfully…
This core MOCVD technology is applied to InP devices and PICs for engineering symmetric far-fields, ensuring efficient heat-extraction, and in low noise amplifiers. Images show (left) stained images of realised…
Iteration of MOCVD epitaxial re-growth, TEM structural characterisation, and device test of re-grown devices allows process development and transfer to volume manufacture.
