+44 (0) 141 266 0115

info@III-VEpi.com

Case Studies

Examples of how we have supported customers with their MBE and MOCVD requirements.

Article 1. Prof. Hogg, CTO, explains how epitaxial regrowth enhances semiconductor laser performance

AlGaAs based lasers 68x nm to 8xxnm

GaAs/AlAs DBRs – Wafer Mapping

Advanced InP Re-Growth

InP Buried-Heterostructures

Qualified DFB – Test Data

InP DFB Re-Growth

Lattice Matched 50 nm gate length GaAs Metamorphic HEMTs (In0.53GaAs channel)

Pseudomorphic 50 nm gate length InP HEMTs (In0.70GaAs channel)

Mid IR-DBRs

Low Density Quantum Dots

InSb Photo-Pixel & GaAs MESFET

Multi-Spectral MIR LED

MIR LEDs & Photodiode – On Silicon

AlInGaAsSb Inter-band Lasers

AlInGaAsSb Quantum Cascade Lasers

GaAs/AlGaAs Lasers (7xx–8xx nm)

MBE Capabilities

Call us today at +44 (0) 141 266 0115
or email us at info@iii-vepi.com

We look forward to hearing from you.

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