AlSb/GaInSb RCLED at ~4.25µm Broad area lasers have exhibited Jth=1.3 kAcm-2 In order to maximise extraction efficiency and engineer a narrower emission spectrum for gas sensing applications, we developed an…

Single InAs QD required for physics studies Vary QD density across wafer by stopping rotation of wafer Phys. Rev. Lett. 120, 213901 (DOI:https://doi.org/10.1103/PhysRevLett.120.213901) An academic customer required low areal density…

AlInSb photo-detector GaAs MESFET GaAs substrate Xie, C., et al. (2015) . IEEE Transactions on Electron Devices, 62(12), pp. 4069-4075. (doi:10.1109/TED.2015.2492823) To allow our academic customer to integrate GaAs based…

4x Colour MIR LED Grown on GaAs APL 111, (10),  102102.   DOI: 10.1063/1.4986396 To allow future integration with GaAs based electronics, MBE processes to realise a novel multi-colour LED structure…

Full p-i-n structure grown on Si Electroluminescence ~4.25 μm III-V epitaxy on silicon processes have been developed to produce antimonide LEDs and PDs.

Preliminary results – RT operation demonstrated With the R&D team of a leading laser manufacturer, we developed MBE epitaxial processes to realise antimonide lasers in the >2um region.

Development of QCL technologies in a range of projects through MBE grown base epitaxy.

Example:  780nm edge emitting laser structure Broad area lasers have exhibited Jth=1.3 kAcm-2