Mid IR-DBRs
AlSb/GaInSb RCLED at ~4.25µm Broad area lasers have exhibited Jth=1.3 kAcm-2 In order to maximise extraction efficiency and engineer a narrower emission spectrum for gas sensing applications, we developed an…
Read More Low Density Quantum Dots
Single InAs QD required for physics studies Vary QD density across wafer by stopping rotation of wafer Phys. Rev. Lett. 120, 213901 (DOI:https://doi.org/10.1103/PhysRevLett.120.213901) An academic customer required low areal density…
Read More InSb Photo-Pixel & GaAs MESFET
AlInSb photo-detector GaAs MESFET GaAs substrate Xie, C., et al. (2015) . IEEE Transactions on Electron Devices, 62(12), pp. 4069-4075. (doi:10.1109/TED.2015.2492823) To allow our academic customer to integrate GaAs based…
Read More Multi-Spectral MIR LED
4x Colour MIR LED Grown on GaAs APL 111, (10), 102102. DOI: 10.1063/1.4986396 To allow future integration with GaAs based electronics, MBE processes to realise a novel multi-colour LED structure…
Read More MIR LEDs & Photodiode – On Silicon
Full p-i-n structure grown on Si Electroluminescence ~4.25 μm III-V epitaxy on silicon processes have been developed to produce antimonide LEDs and PDs.
Read More AlInGaAsSb Inter-band Lasers
Preliminary results – RT operation demonstrated With the R&D team of a leading laser manufacturer, we developed MBE epitaxial processes to realise antimonide lasers in the >2um region.
Read More AlInGaAsSb Quantum Cascade Lasers
Development of QCL technologies in a range of projects through MBE grown base epitaxy.
GaAs/AlGaAs Lasers (7xx–8xx nm)
Example: 780nm edge emitting laser structure Broad area lasers have exhibited Jth=1.3 kAcm-2
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