Setting the specification level for the epitaxy layers in a wafer structure beyond the capabilities of the standard laboratory characterisation tools, increases costs.
Prof. Richard Hogg and Dr. Neil Gerrard’s article, “Specifying Epitaxial Wafers for Optimal Cost and Performance”, considers how savings can be made with the correct specification.
If a growth reactor needs “parking” while the characterisation process takes place, costs increase. The article explains what are standard characterisation techniques that don’t add cost, such as electrochemical capacitance-voltage (eCV), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy; and those that do add cost, such as Hall measurements and Secondary Ion Mass Spectrometry (SIMS).
Involve the experts at III-V Epi to ensure your wafer design is optimised for fabrication.