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MOVPE Capabilities

Aixtron 2400 5×3”

  • InP regrowth
  • InGaAsP alloys

Aixtron 3×2” CCS

  • GaAs regrowth
  • AlGaAsInP alloys
GaAs/AlGaAs Lasers (7xx–8xx nm)
MBE Capabilities

Pseudomorphic 50 nm gate length InP HEMTs (In0.70GaAs channel)

MBE Capabilities

Expert Article 1. Prof. Hogg, CTO, explains how epitaxial regrowth enhances semiconductor laser performance

MOCVD Capabilities
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