This core MOCVD technology is applied to InP devices and PICs for engineering symmetric far-fields, ensuring efficient heat-extraction, and in low noise amplifiers. Images show (left) stained images of realised devices, and (right) test structures used to understand and engineer the development of the growth front.
InP Buried-Heterostructures
![](https://www.iii-vepi.com/wp-content/uploads/2021/07/Screenshot-2021-07-12-at-17.26.16-1024x826.png)
![](https://www.iii-vepi.com/wp-content/uploads/2021/07/InP-Buried-Heterostructures-2.png)