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Qualified DFB – Test Data

Our InP DFB MOCVD re-growth processes have been qualified for commercial 1310nm DFBs.

InP Buried-Heterostructures
InP DFB Re-Growth

Pseudomorphic 50 nm gate length InP HEMTs (In0.70GaAs channel)

MBE Capabilities

High Electron Mobility Transistors

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