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Modulators

High Electron Mobility Transistors
Photo detectors

Expert Article 1. Prof. Hogg, CTO, explains how epitaxial regrowth enhances semiconductor laser performance

MOCVD Capabilities

Lattice Matched 50 nm gate length GaAs Metamorphic HEMTs (In0.53GaAs channel)

MBE Capabilities

Expert Article 2. A comparison between Molecular Beam Epitaxy and Metal Organic Chemical Vapour Phase Epitaxy technologies.

MBE Capabilities, Mockups
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