+44 (0) 141 266 0115
info@III-VEpi.com
Home
Services
Technologies
Case Studies
News
Team
Contact
LEDs
Amplifiers
Lasers
Mid IR-DBRs
MBE Capabilities
InP Buried-Heterostructures
MOCVD Capabilities
Pseudomorphic 50 nm gate length InP HEMTs (In0.70GaAs channel)
MBE Capabilities
High Electron Mobility Transistors
Services
Menu