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Pseudomorphic 50 nm gate length InP HEMTs (In0.70GaAs channel)

Lattice Matched 50 nm gate length GaAs Metamorphic HEMTs (In0.53GaAs channel)
Mid IR-DBRs

Expert Article 1. Prof. Hogg, CTO, explains how epitaxial regrowth enhances semiconductor laser performance

MOCVD Capabilities
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