Professor Richard Hogg, CTO of III-V Epi, has released his next Expert Article, ‘A comparison between Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapour Phase Epitaxy (MOCVD) technologies’. This can be read on the III-V Epi website.
The article compares the MBE and MOCVD epitaxial growth technologies used in III-V semiconductor synthesis and explores the applications they best suit and why. Material systems and wavelengths, applications, process speeds, base and regrowth epitaxy requirements, structure requirements, etching, accuracy and measurement techniques are all covered.