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Qualified DFB – Test Data
Our InP DFB MOCVD re-growth processes have been qualified for commercial 1310nm DFBs.
InP Buried-Heterostructures
InP DFB Re-Growth
Lasers
Services
GaAs/AlAs DBRs – Wafer Mapping
MOCVD Capabilities
Pseudomorphic 50 nm gate length InP HEMTs (In0.70GaAs channel)
MBE Capabilities
Lattice Matched 50 nm gate length GaAs Metamorphic HEMTs (In0.53GaAs channel)
MBE Capabilities
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