Professor Richard Hogg, CTO of III-V Epi and Dr. Neil Gerrard, Director of Epitaxy shared their knowledge of photonics manufacturing in two expert articles released during 2024, both of which received wide interest and became the basis of feature columns in Electronics Weekly, Photonics Views and Electro Optics.
The first covered Epitaxial Regrowth and how it enhances semiconductor laser performance. The second compared MBE and MOCVD epitaxial technologies.
Epitaxial Regrowth.
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This article looks at the epitaxial regrowth process for indium phosphide (InP) lasers, commonly used in 5G, datacomms, telecoms and co-located optics applications. It goes on to consider gallium arsenide (GaAs), a less mature material system, which suits a multitude of emerging industrial, biomedical imaging, datacomms, and sensing laser applications.
Comparison of MBE and MOCVD technologies.
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This article compares the MBE and MOCVD epitaxial growth technologies used in III-V semiconductor synthesis and covers material systems and wavelengths, applications, process speeds, base and regrowth epitaxy requirements, structure requirements, etching, accuracy and measurement techniques.