III-V Epi’s Chief Technical Officer, Professor Richard Hogg’s expert article on epitaxial regrowth has been the basis of feature columns in Electronics Weekly, Photonics Views and Electro Optics.
Richard looked at the relatively mature, epitaxial regrowth process for indium phosphide (InP) lasers, commonly used in 5G, datacoms, telecoms and co-located optics applications. He went on to consider how gallium arsenide (GaAs), a less mature material system, is probably better suited to a multitude of emerging, laser applications in industrial, biomedical imaging, datacomms, and sensing.
Epitaxial regrowth offers heat dissipation; reduced optical loss; and improved photonics integration, with next-generation, device performance.
Read the full articles here: